Silicon and Silicon/Germanium Epitaxial Wafers

SOL #: 1333ND26QNB030152Solicitation

Overview

Buyer

Commerce
National Institute Of Standards And Technology
DEPT OF COMMERCE NIST
GAITHERSBURG, MD, 20899, United States

Place of Performance

Place of performance not available

NAICS

Semiconductor and Related Device Manufacturing (334413)

PSC

Specialized Semiconductor, Microcircuit, And Printed Circuit Board Manufacturing Machinery (3670)

Set Aside

Total Small Business Set-Aside (FAR 19.5) (SBA)

Timeline

1
Posted
Apr 27, 2026
2
Last Updated
May 6, 2026
3
Submission Deadline
May 12, 2026, 5:00 PM

Qualification Details

Fit reasons
  • NAICS alignment with historical contract wins in similar service areas.
  • Scope strongly matches core technical capabilities and delivery model.
Risks
  • Past performance thresholds may require one additional teaming partner.
  • Potential clarification needed on staffing minimums before bid/no-bid.
Next steps

Validate eligibility requirements, assign capture owner, and schedule partner outreach to confirm teaming strategy before submission planning.

Quick Summary

The National Institute of Standards and Technology (NIST) is soliciting quotations for Silicon and Silicon/Germanium Epitaxial Wafers to support its CHIPS Metrology program. This is a Total Small Business Set-Aside opportunity. The solicitation has been amended to address public questions and update minimum specifications. Quotations are due May 12, 2026, at 5:00 PM ET.

Scope of Work

NIST requires high-quality epitaxial film stacks on 100 mm silicon wafers. The procurement includes several line items for "Thin" and "Thick" wafers with specific silicon and silicon/germanium layer compositions, thicknesses, and dopant levels. Key requirements include:

  • Substrate Diameter: 100 mm.
  • Growth Method: Not specified; any production method yielding wafers meeting all specifications (thickness, composition, coherency) is acceptable. Vendors may use different methods (e.g., MBE for thin stacks, CVD for thick films).
  • SiGe Composition Tolerance: 5 atomic percent (e.g., Si0.70Ge0.30 means Si0.70±0.05Ge0.30±0.05).
  • Specific Line Items: Includes "Thin" Si and SiGe layers on Si (Spec 1 & 2, 15 wafers each).
  • Optional Line Items (0003-0007): For "Thin" doped Si on Si, "Thick" doped Si on Si, Isotopically enriched 28Si on Si, "Thin" Si and SiGe layers on Si, and "Thick" SiGe on buffered Si. These have a minimum quantity of 10 wafers and configurable specifications.
  • Data Requirements: Secondary Ion Mass Spectroscopy (SIMS) and Spreading Resistance Profiling (SRP) data must be available for each lot.
  • Delivery: Within 20 weeks of award.

Contract Details

  • Type: Request for Quotations (RFQ) leading to a Purchase Order.
  • NAICS Code: 334413 - Semiconductor and Related Device Manufacturing (Small Business Size Standard: 1250 employees).
  • Set-Aside: Total Small Business.
  • Optional Line Items Validity: Three years after acceptance of CLINs 0001 and 0002.

Submission & Evaluation

  • Offer Due Date: May 12, 2026, 5:00 PM ET.
  • Submission: Firm-fixed price quotations are required for all line items, demonstrating the product's ability to meet or exceed minimum specifications. A completed copy of all required solicitation provisions must be included.
  • Eligibility: An active System for Award Management (SAM) registration is required.
  • Award Basis: Lowest price, technically acceptable.
  • Evaluation: Price will be evaluated for technical acceptability, then for overall fair and reasonable price.

Additional Notes

  • The Government's terms and conditions will prevail in case of conflict with the contractor's terms and conditions.
  • Contact: Erik Frycklund at erik.frycklund@nist.gov.

People

Points of Contact

Erik FrycklundPRIMARY

Files

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Versions

Version 3
Solicitation
Posted: May 6, 2026
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Solicitation
Posted: Apr 30, 2026
Version 1
Solicitation
Posted: Apr 27, 2026
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